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Nonvolatile memory devices based on organic field-effect transistors
  • ISSN号：1001-6538
  • 期刊名称：Chinese Science Bulletin
  • 时间：0
  • 页码：1325-1332
  • 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TN3[电子电信—物理电子学]
  • 作者机构：[1]School of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China, [2]Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 相关基金：This work was supported by the National Basic Research Program of China （2011CB808404 and 2009CB939703） and the National Natural Science Foundation of China （10974074, 90607022, 60676001, 60676008 and 60825403）.
  • 相关项目：具有分立光生激子产生沟道的有机光敏场效应管研究
作者： Wang Hong|Peng YingQuan|Ji ZhuoYu|Liu Ming|Shang LiWei|Liu XingHua|
关键词： 有机场效应晶体管, 非易失性存储器, 设备配置, 聚合物驻极体, 存储介质, 内存, 记忆体, 重量轻, organic nonvolatile memory, organic field-effect transistors, floating gate, ferroelectric, organic electret
中文摘要：

在为器官的记忆设备的许多可能的设备配置之中，器官的地效果晶体管(OFET ) 记忆是有潜力的一种新兴的技术认识到小、便宜、灵活电荷存储媒介。在这篇特征文章，在基于 OFET 的存储器的类上的最近的进步，包括的漂浮的门 OFET 存储器，聚合物驻极体 OFET 存储器，铁电体 OFET 存储器和几其它种 OFET 有唯一的配置的记忆，被介绍。最后， OFET 记忆的前景和问题被讨论。

英文摘要：

Among the many possible device configurations for organic memory devices, organic field-effect transistor （OFET） memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed.

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