中文摘要：

利用砷化镓场效应管器件的非线性特性设计了一个单端毫米波段二倍频器，输入频率为27次谐波抑制大于25 dB。芯片总面积（含pad）为1．068 mm ＆#215;0．495 mm。

英文摘要：

A single-ended millimeter-wave frequency doubler imposing on the nonlinear characteristic of GaAs field effect transistor is presented .Its input frequency is 27 33 GHz, and output frequency is 54 66 GHz. The frequency doubler is included a nonlinear device , matching circuit , and a biasing circuit . For a fundamental input power of 5 dBm, this frequency doubler demonstrates an output power between 2.3 and 0 dBm, the fundamental rejection is beyond 15 dB and the third harmonic frequency rejection is over 25 dB. The total size of this compact chip is 1.068 mm ＆#215;0.495 mm.