中文摘要：

对采用等离子增强化学气相淀积法（PECVD）制备的氢化非晶硅（a-Si：H）薄膜进行了退火释H2实验,并对三文治结构膜层生长工艺作了改进。红外透射光谱表明：提高退火温度及增加退火时间会造成Si-H键断裂释放H2影响器件结构完整;不断改进设计,最终采用精简有效热敏面积及将退火工艺提前以扩张释H2渠道的方案,获得600℃退火后仍保持完整三文治结构的优化设计流程。

英文摘要：

The amorphous silicon-hydrogenated（a-Si：H） films with sandwich-structure are fabricated by PECVD method.The transmission infrared spectra（TIR） for the films annealed at different conditions show that the bonds of the films will be changed at higher annealed temperature（600 ℃） and longer annealed time,which leads to the hydrogen release,thus the sandwich structure of the films is broken.By improving the anneal technique and film structure,the films with complete sandwich structure are obtained at 600 ℃.