中文摘要：

利用质子辐照感生的局域高浓度空位缺陷对样品表面层预生成的铂硅合金中的铂原子进行汲取，形成与感生缺陷分布相似的局域铂分布，首次实现了具有局域铂掺杂的快恢复二极管中的局域寿命控制技术。报告了改变质子注入剂最对二极管反向恢复时间和反向漏电流等参数的影响。结果表明，当辐照剂量较低时．随着辐照剂量的增加，电活性铂浓度不断提高，器件性能不断优化。而辐照剂量增加到一定程度，有效区电活性铂杂质的浓度会趋向饱和，二极管反向恢复时间基本上不再继续减小。

英文摘要：

Local platinum doping is obtained by means of platinum gettering through the vacancy defects induced by proton irradiation. The platinum profile is quite similar as the distribution of proton irradiation induced defect. For the first time, it is used in fast recovery diode as a local lifetime control technology. The influence of proton irradiation dose on the performance of the diode is reported. At low irradiation dose, the concentration of active platinum increases and the performance of the device optimized as the dose of proton irradiation increases. When the irradiation dose is high enough, the gettering profile of platinum has the saturation tendency. It＇s quite valuable for the research of platinum gettering efficiency.