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Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 int
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：133506-
  • 相关项目：钙钛矿氧化物薄膜的阻变机制及室温低场阻变式存储器研究
作者： J. Sun, C. H. Jia, G. Q. Li, and Weifeng Zhang*|
同期刊论文项目
钙钛矿氧化物薄膜的阻变机制及室温低场阻变式存储器研究
期刊论文 21
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