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中文摘要：
针对典型的硅微波低噪声三极管进行静电放电电磁脉冲效应实验。主要研究静电放电沿着三极管的哪个管脚组合（端对）注入时最容易造成三极管的损伤。三极管的那个部位对静电放电最为敏感。实验采用静电放电模拟器对三极管的所有管脚组合（端对）进行静电放电，每次静电放电后测量三极管主要电参数的变化情况，根据有关规定判断三极管是否损伤。实验发现，国产三极管3DG120D和日本产三极管2SC3331沿着各个管脚组合（端对）注入静电放电电磁脉冲时的损伤电压不同，沿着CB端对注入静电放电电磁脉冲时的损伤电压最小。CB端对对静电放电最为敏感。硅微波低噪声三极管对静电放电电磁脉冲最敏感的部位是集电结（CB结）。
英文摘要：
Experiments of electrostatic discharging eletromagnetic pulse effect on the typical low noise silicon microwave triode had been conducted. The purpose was to find out along which pin combination （port） of the triode would be the most vulnerable and which part would be the most sensitive to electrostatic discharge. In the experiment, an electrostatic discharging simulator was used to electrostatic discharge for all the pin combinations of the triode. Each time after the electrostatic discharge, the changes of the major electrical parameters were measured to determine whether the triode was damaged in accordance with the relevant rules. The experiments showed that when electrostatic discharging electromagnetic pulse was infused into the triode along each pin combination （port）, the voltage causing the damage to the triode 3DG120D made in China was different from the triede 2SC3331 made in Japan, and when the discharging electromagnetic pulse was infused along the CB port, the damaging voltage was the least, so the CB port was the most sensitive to electrostatic discharge. In conclusion, the most sensitive part of the low noise silicon microwave triode to electrostatic discharging eletromagnetic pulse was the collector （ CB junction）.
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