在介质阻挡放电中,对放电丝结构从四边形向四边形格子态结构转变中的缺陷进行了研究.实验发现,在四边形向四边形格子态结构的转化中,存在两种缺陷:角缺陷及错位缺陷.为了研究缺陷的形成机理,实验测量了四边形格子态结构中不同放电丝的发光信号,结果发现八边形晶胞的中心放电丝发光强度强于边缘放电丝发光强度.通过引入准势场,研究了放电丝之间的相互作用及其对放电丝结构转变的影响,并由此分析了在转变过程中出现的缺陷,结果与实验符合得很好.
The defects in the transition from square to square grid states are studied in a dielectric barrier discharge.It is found that there exist two kinds of defects in this transition,which are angle defect and dislocation defect.In order to investigate the formation mechanism of the defects,the light emissions from different filaments are measured,which show that the light intensity of filament in the middle of the octagonal cell is larger than that in the side.By introducing the quasi-potential field,the interactions between filaments as well as their influences on the transition between different structures are studied.From above analyses,the defects that could emerge in the transition are suggested,which are in good agreement with that observed in experiments.