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中文摘要：
硅通孔（TSV）的电阻开路故障和泄漏故障会降低三维集成电路的良率和可靠性, 为在制造流中尽早排除故障TSV, 提出一种基于环形振荡器的绑定前TSV 测试方法. 首先将环形振荡器的TSV 接收器分为一般反相器和施密特触发器, 并比较这2 种环形振荡器的测试分辨率; 然后把施密特触发器作为TSV 接收器引入绑定前TSV 测试; 为防止误测或误诊断, 采用多个低电压测试TSV. 基于45 nm PTM CMOS 工艺的HSPICE 模拟结果表明, 与现有同类方法相比, 该方法具有更高的测试分辨率, 且能测试大电容TSV 和同时存在电阻开路故障和泄漏故障的TSV.
英文摘要：
Resistive open fault and leakage fault in TSV decrease the yield and reliability of 3D-ICs. To screen out these faults early in the manufacturing flow, a prebond TSV test method using ring oscillator is proposed. Firstly, according to different TSV receivers which can be normal inverter or Schmitt-Trigger in-verter, we divide the ring oscillators into two types and compare their test resolution. Then, the Schmitt-Trigger inverter is used as TSV receiver in our test structure. In order to avoid the wrong test or di-agnosis, TSV is tested in multiple low voltage levels. Experimental results with HSPICE simulations using 45nm CMOS technology show that the proposed test scheme achieved a higher resolution compared to pre-vious works. In addition, the test scheme can be used to test large capacitance TSV and the TSV which exists resistance open fault and leakage fault.
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