中文摘要：

接口特征在薄电影设备的性能上拥有很重要的影响。ITO/PTCDA/p-Si 薄电影设备与真空蒸发和噼啪声免职方法被建立。ITO/PTCDA/p-Si 的表面和接口电子国家被 X 光检查光电子光谱学(XPS ) 和氩离子横梁调查蚀刻技术。结果在 ITO/PTCDA/p-Si，不是仅仅 ITO/PTCDA-Si 的接口显示那而且 PDCDA-Si 能生产散开。而且，每个原子的 XPS 系列显得化学移动，和 Ols 和 Ols 的化学移动是更显著的。CLC 数字 O484 文件代码 A 工程被中国的国家自然科学基础支持(不同意 60076023 )

英文摘要：

Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.