中文摘要：

减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO2：F薄膜衬底上制备未掺杂的SnO2薄膜形成过渡层,并将其在N2/O2=4：1,550℃环境进行了30min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复合薄膜的电学特性.结果表明,未掺杂的SnO2薄膜没有出现异相的谱线,并且（110）择优取向,与衬底具有相同的结构,复合薄膜界面无晶格失配;退火后,复合膜更加均匀致密,表面更加规则,平整,光洁;薄膜电阻增大,满足阻挡层的要求,具有良好的电学均匀性和大于80%的透过率.最终制备出适合用作CdS/CdTe太阳电池前电极的SnO2：F/SnO2复合薄膜。

英文摘要：

Decreasing CdS thickness is one of the effective ways to improve the conversion efficiency of CdS /CdTe solar cells.In order to eliminate the adverse effects of the decrease in CdS thickness on the performances of the devices,it is necessary to introduce a buffer layer between CdS and front electrode layer.The un-doped SnO2 thin films,as a buffer layer,were deposited on SnO2：F thin film by magnetic reactive sputtering.Then the composite film was annealed at 550 ℃ in N2 /O2 = 4：1 ambience for 30 minutes.The morphology,structure and optical properties of the composite film before and after annealing were studied by AFM,XRD,UV-Vis and the electrical properties were analyzed,respectively.As a result,the crystal lattice parameters of un-doped SnO2 films matched those of the substrate,so the un-doped SnO2 films,which had an obvious preferred orientation along（110） plan,had the same structure as the substrate materials.This implied that there was no lattice mismatch.After annealing,the surface topography and electricity uniformity were improved,higher than 80% transparency was obtained,and resistance increased to meet the requirements of the buffer layers.Finally,continuous and homogeneous SnO2：F /SnO2 composite thin films have been obtained,which were very suitable for CdS /CdTe cells.