Doping Silicon Wafers with Boron by Use of Silicon Paste
ISSN号:1005-0302
期刊名称:《材料科学技术学报:英文版》
分类:TN304.12[电子电信—物理电子学] TN304.18[电子电信—物理电子学]
作者机构:State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
相关基金:Acknowledgments The authors acknowledge financial support from the Na- tional Basic Research Program of China ("973 Program", Grant No. 2013CB632101), the National Natural Science Foundation of China (Grant No. 50902122), the R&D Program of Ministry of Education of China (Grant No. 62501040202), the Innovation Team Project of Zhejiang Province (Grant No. 2009R50005) and the Xinmiao Program of Zhejiang Province, China.