中文摘要：

利用理论推导和实验方法对电可擦除可编程只读存储器EEPROM单元在给定电压下的电荷保持特性进行了分析和研究,得出了EEPROM单元电荷保持能力的理论公式,得到了单元保持状态下的电特性曲线,发现在双对数坐标下,阈值电压的退化率与时间成线性关系.在假定电荷流失机制为Fowler-Nordheim隧穿效应的情况下,推出了EEPROM单元在给定外加电压下的电荷保持时间,并通过实验得出了简化的EEPROM单元寿命公式.

英文摘要：

We present a theoretical and experimental investigation of the date retention ability of EEPROM cells at a given voltage. An expression for EEPROM data retention is derived. The electrical characteristics are presented. The result shows that the data retention time varies linearly with the applied voltage in a log-log plot. Under the assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide,the data retention time of EEPROM ceils is derived, and the experience formula is checked by experiment.