中文摘要：

有约束力的精力和浅施主杂质的空效果精力移动在拉紧的 GaN/Al x Ga1x N 球形的有限潜力的量声明点(QD ) 基于有效集体近似用一个变化方法是计算的。有约束力的精力作为点尺寸和静水力学的压力的功能被计算。数字结果证明杂质州的有约束力的精力增加，达到最大的值，然后当 QD 半径为任何电场增加，减少。而且，有约束力的精力为点的任何尺寸与压力增加。为大点尺寸的杂质精力的空移动为小点尺寸比那大得多，并且它被电场的增加提高。我们有或没有紧张效果比较杂质状态的有约束力的精力，并且结果证明紧张效果更加提高杂质绑定精力，特别为小 QD 尺寸。我们也在我们的工作考虑绝缘的失配。

英文摘要：

The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot （QD） are calculated using a variational method based on the effective mass approximation. The binding energy is computed as a function of dot size and hydrostatic pressure. The numerical results show that the binding energy of the impurity state increases, attains a maximum value, and then decreases as the QD radius increases for any electric field. Moreover, the binding energy increases with the pressure for any size of dot. The Stark shift of the impurity energy for large dot size is much larger than that for the small dot size, and it is enhanced by the increase of electric field. We compare the binding energy of impurity state with and without strain effects, and the results show that the strain effects enhance the impurity binding energy considerably, especially for the small QD size. We also take the dielectric mismatch into account in our work.