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High-resistivity GaN homoepitaxial layer studied by Schottky diode structure
  • ISSN号：0013-5194
  • 期刊名称：Electronics Letters
  • 时间：0
  • 页码：644-649
  • 语言：英文
  • 相关项目：新型低维量子结构与器件
作者： Hingbiao Shi|Hai Lu, et al|
同期刊论文项目
新型低维量子结构与器件
期刊论文 196 会议论文 66 获奖 2 专利 22 著作 2
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