中文摘要：

Nano 原文如此做的 MgB_2 磁带被准备由在里面 situ powder-in-tube 方法。热处理为 1 h 在 650 deg C 被执行。XRD 数据显示原文如此，粒子在 sintering 期间与 MgB_2 反应了进程。MgB_2 核心似乎在原文如此做以后更稠密，并且临界溶液温度是沮丧的。原文如此做的磁带的批评电流密度 J_c 显著地与 undoped 相比在磁场被提高直到 14 T。为 5% 原文如此做的样品， J_c 是近於在 4.2 K 的 32 的一个因素， 10 T。在原文如此做的 MgB_2 磁带的 J_C-B 性质的改进被认为由于谷物连接和卡住中心的有效流动的介绍的改进。由在 MgB_2 谷物的 C 的 B 的替换被认为是为在原文如此做的 MgB_2 磁带卡住能力的流动的改进的主要原因。

英文摘要：

Nano-SiC doped MgB2 tapes were prepared by the in situ powder-in-tube method. Heat treatment was performed at 650℃ for 1 h. XRD data indicate that SiC particles had reacted with the MgB2 during sintering process. MgB2 core seemed to be denser after SiC doping, and the critical temperature was slightly depressed. The critical current density Jc of the SiC doped tapes was significantly enhanced in magnetic fields up to 14 T compared to the undoped ones. For the 5% SiC doped samples, Jc was increased by a factor of 32 at 4.2 K, 10 T. The enhancement of Jc-B properties in SiC doped MgB2 tapes is considered to be due to the enhancement of grain linkages and the introduction of effective flux pining centers. The substitution of B by C in MgB2 grains is thought to be the main reason for the improvement of the flux pinning ability in SiC doped MgB2 tapes.