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Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-S
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：3213-3216
  • 语言：英文
  • 相关项目：超导体与半导体等功能材料晶体结构、微结构和缺陷的电子晶体学研究
作者： Liang, J. W.|Li, F. H.|Zou, J.|Wang, Y. M.|Wen, C.|Wan, W.|
同期刊论文项目
超导体与半导体等功能材料晶体结构、微结构和缺陷的电子晶体学研究
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