中文摘要：

研究了ZnO—Bi2O3系压敏陶瓷等效势垒高度Фeff随着归一化电压的变化规律，发现等效势垒高度Фeff随着归一化电压的增加先逐渐增大，达到最大值后持续下降．由于在外加电压作用下反偏势垒高度高于正偏势垒高度，等效势垒高度Фeff主要取决于反偏势垒．因此，这种变化规律说明了ZnO压敏陶瓷晶界的导电过程可能存在三个阶段．在低归一化电压区，晶界区域中的电子从正偏势垒区注入到晶界无序层的速率低于电子从晶界无序层抽出到反偏势垒区的速率，从而导致等效势垒高度随着归一化电压的增加逐渐增大．在中等归一化电压区，电子从正偏势垒区注入到晶界无序层的速率和电子从晶界无序层抽出到反偏势垒区的速率相平衡，等效势垒高度达到最大值．在高归一化电压区，电子从正偏势垒区注入到晶界无序层的速率高于电子从晶界无序层抽出到反偏势垒区的速率，等效势垒高度随着归一化电压的增加逐渐下降，直至晶界击穿．同时分析了等效势垒高度Фeff对泄漏电流IL的影响，发现泄漏电流与等效势垒高度差△Ф呈指数关系．

英文摘要：

The relationship between the equivalent barrier height of ZnO-Bi2O3 based varistor ceramics and normalized applied voltage was studied and it was found that the equivalent barrier height is influenced by normalized voltage greatly. With the increase of normalized voltage the equivalent barrier height increases firstly, then changes little and finally decreases quickly. Because the Sehottky barrier height at the reverse-biased side is higher than that at the forward-biased side, the equivalent barrier height is determined by the former. The changing trend of the equivalent barrier height with normalized voltage indicates three steps of conduction. Firstly, in low normalized voltage range the velocity of electron injection from the forward-biased barrier area into the amorphous layer at grain-boundary is lower than that of ejection from traps in the amorphous layer into the reverse-biased barrier area. Thus the equivalent barrier height increases with the growth of normalized voltage. Secondly, in medium normalized voltage range, the injection velocity and the ejection velocity of electron is equal and the equivalent barrier height reaches its maximum value. Finally, in high normalized voltage range the injection velocity of electron is quicker than the ejection velocity of electron and the equivalent barrier decreases with the increase of the normalized voltage. In the end the Sehottky barrier will break electrically. At the same time the relationship between the equivalent barrier height and the leakage current was analyzed and it was found that the leakage current is determined by an exponential function of the difference between the equivalent barrier heights when normalized voltage is 1 and 0.75.