中文摘要：

采用射频（RF）磁控溅射沉积方法,在室温不同压强下在石英玻璃衬底上制备出高透光率与较好电学性质的透明氧化物半导体InGaZnO4（IGZO）薄膜,并对薄膜进行X线衍射（XRD）、生长速率、电阻率和透光率的测试与表征.结果表明,实验所获样品IGZO薄膜为非晶态,薄膜最小电阻率为1.3×10^-3Ω·cm,根据光学性能测试结果,IGZO薄膜在200～350 nm的紫外光区有较强吸收,在400～900 nm的可见光波段的透过率为75％～97％.

英文摘要：

The InGaZnO films with high transmittance and better electrical properties were grown on a quartz glass substrate at room temperature under different pressures by RF magnetron sputtering deposi- tion method. The X-ray diffraction pattern, the growth rate of the film, the resistivity and the light trans- mittance were measured. The results indicated that the IGZOfims was amorphous, and the minim resistivi- ty was 1.3×10^-3Ω· cm. The abrupt absorption edge of the film appeared at about 200 350 nm, and the film presented a high transmittance of 75 % 97 % in the visible range from 400 to 900 nm.