通过有机化学气象沉积(MOCVD)技术在n型GaAs衬底上生长制作了发射波长为850 nm的VCSELs4×4列阵器件,介绍了VCSELs的制作工艺流程。对器件进行了相干性测量,计算了干涉条纹可见度,分析了影响干涉条纹可见度的因素。
The devices of top-emitting 4×4 VCSELs array with the emission wavelength of 850 nm was produced,and the production process of VCSELs were described.Coherence of the device were measured,the visibility of interference figure was calculated,and the effect factor of interference fringe visibility was also analyzed.