中文摘要：

利用固源分子束外延（SSMBE）生长技术,在1350K的衬底温度下,通过改变Si束流强度,在6H-SiC（0001）面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜,并用反射高能电子衍射（RHEED）与光致发光（PL）谱对生长的薄膜的晶型和发光特性进行表征，RHEED结果显示生长的薄膜为6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜，室温下He-Gd激光激发的光致发光（PL）谱显示,薄膜在480-600nm范围内存在衬底未观察到的较强发光，拟合得到的发光峰与依据量子阱结构模型计算出的发光位置较为一致，由此表明,该强发光带可能是6H-SiC/3C-SiC/6H-SiC量子阱结构的发光。

英文摘要：

Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC（0001） with the substrate temperature of 1350 K by solid source molecular beam epitaxy （SSMBE） through the variation of Si flux rate. The crystal polytypes and luminescent properties of the film were characterized by reflection high energy electron diffraction （RHEED） and photoluminescence （PL）, respectively. The results of RHEED indicated that the film was 6H-SiC/3C-SiC/6H-SiC with the quantum well structure. The results of PL excited by He-Gd laser at room temperature showed that there were intense emissions in the range of 480-600 nm, which could not be observed from the substrate. The fitting peaks were consistent with the results calculated from the model of quantum well structure, which showed that such intense emissions were probably from the quantum wells with different widths.