不同晶粒大小、高度c轴取向的氧化锌薄膜通过射频反应磁控溅射法成功地沉积在自支撑金刚石薄膜的成核面上。紫外光辐照下,ZnO/金刚石薄膜结构紫外光探测器有明显的光响应特性。探测器的暗电流、光电流与ZnO薄膜的晶粒尺寸及质量有关。在+10V偏压条件下,氧化锌薄膜的晶粒尺寸越大,则探测器的暗电流越小而光电流越大。光电流的时间依赖性证实了载流子的陷阱效应。
Highly c-axis oriented ZnO films with different grain size were deposited on the nucleation sides of freestanding diamond films by RF reactive magnetron sputtering. A significant photoresponse of ultraviolet photodetectors with ZnO/diamond structure was observed under UV light illumination. The clark-current and the photocurrent of the ZnO photodetectors were relative to the grain size and the quality of ZnO films. For the photodetector with a bigger grain size,a weaker dark current and a stronger photocurrent were obtained at+ 10 V bias voltage. The time-dependent photocurrent confirmed the carrier trapping effect.