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中文摘要：
以模板效应为手段，在单品Si-（100）基片上借助预先沉积的Mo膜成功制备出共格生长的α-W薄膜．用X射线衍射、场发射扫描电镜和高分辨透射电镜分析薄膜微结构，用偏振相位移技术分析残余应力，用四点探针技术分析电阻率．结果表明：Mo模板诱导下共格生长出的α-W膜为等轴品，Si基底上则为亚稳态β-W的非等轴晶．两组样品的电阻率和残余应力均随膜厚降低而升高，但β-W膜归因于品粒尺寸减小，即晶界的大量增加；而α-W／Mo双层膜归因于两者之间共格界面的约束作用，当膜厚减至数十纳米后尤其如此.
英文摘要：
By means of template effect the α-W thin films were successfully coherent grown on pre-deposited Mo seed-layer on Si substrate at ambient temperature by magnetron sputtering. Microstructures have been studied by XRD, FESEM and HRTEM. Residual stress and electric resistance of the thin films were investigated by wafer curvature method and standard four-probe technique. Observations show the stable α-W with equiaxial-grain shape is preferred on Mo layer by template effect while the metastable β-W with non-equiaxed grain structure appeared on Si substrate. With increasing W film thickness, the resistivity and residual stress increase for above two series of samples. For the case of β-W, the thickness dependent properties indeed resulted from increasing grain bound- ary. Whereas, for α-W case, the constraint of coherent interface between α-W and Mo will dominate electric resistance and residual compressive stress, especially at film thicknesses equal to or smaller than tens of nanometers.
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