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铁电存储器的基本单元及其工作模式
  • ISSN号：1672-9722
  • 期刊名称：《计算机与数字工程》
  • 时间：0
  • 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]华中科技大学电子科学与技术系,武汉430074
  • 相关基金：国家自然科学基金重大研究计划项目（90407023）资助
作者： 李建军[1], 王耘波[1], 王龙海[1], 高俊雄[1], 于军[1]
关键词： FRAM, FFET, 2T/2C, 1T/1C, FRAM FFET,2T/2C, 1T/1C
中文摘要：

按照铁电储存器的破坏性读出和非破坏性读出的这两种基本工作模式及其所对应的铁电随机存取存储器FRAM和铁电场效应晶体管肿FFBT两种结构形式的分类，分别介绍了1T／1C，2T／2C结构和铁电场效应晶体管金属-铁电-半导体（MFS）结构的基本铁电存储单元的结构及其工作模式。

英文摘要：

Ferroelectric memory elements, 1T/1C, 2T/2C and MFS, and theirs operating processes are respectively introduced briefly in this paper, according to Ferroelectrie Random Access Memory and Ferroelectrie Field-Effect Transistor corresponding operating processes of fermelectrie memory, destructive read out and non- destmetive read out.

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期刊信息
  • 《计算机与数字工程》
  • 主管单位:中国船舶重工集团公司
  • 主办单位:中船重工集团公司七院第七0九研究所
  • 主编：王小非
  • 地址：武昌74223信箱
  • 邮编：430074
  • 邮箱：jssg@chinajournal.net.cn
  • 电话：027-87534308 87534205
  • 国际标准刊号：ISSN：1672-9722
  • 国内统一刊号：ISSN：42-1372/TP
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  • 被引量:13630