中文摘要：

以高纯五氧化二钒（V2O5）粉末（纯度999．99％，质量分数）为原料，用真空蒸发工艺制备出氧化钒薄膜，并测试其在真空退火前、后的X射线光电子能谱、X射线衍射谱及电阻韫度关系曲线。结果显示：低真空退火对氧化钒薄膜的还原性比高真空退火的强。但是，在高真空退火下得到的氧化钒薄膜的晶粒尺寸要比在低真空下退火的大。随退火温度升高，高真空下退火制备的薄膜经历了从VO2（B）到VO2（B）与V6O13混合，再到V6O13的转变过程，B表示薄膜无热致相变特性。低真空下退火制备的薄膜经历了从VO2（B）到VO2（A）的转变，A表示薄膜有热致相变特性。这些薄膜的电学性质也有很大不同。

英文摘要：

Vanadium oxide thin films were prepared from vanadium pentoxide （V2O5） powder （purity≥99.99%, in mass） by the vacuum evaporation technique and were annealed in a vacuum. The as-annealed and annealed films were all studied by the X-ray photoelectron spectroscopy, X-ray diffraction and resistance-temperature curve. The results show that the vanadium oxide thin films ate reduced more easily when annealed in low vacuum than when annealed in high vacuum. But the films＇ crystal sizes are bigger when annealed in high vacuum than in low vacuum. With the increase of the annealing temperature, the films annealed in high vacuum changed from VO2（B）, which meant the films did not have the property of the thermochromic phase transition, to a mixture of VO2（B） and V6O13, to V6O13, while the films annealed in low vacuum changed from VO2（B） to VO2（A）, which meant the films did have the property of the thermochromic phase transition. Their electrical properties were also vastly different,