中文摘要：

洞搬运人调停了磁化在做 Cu 轧被使用第一原则的计算调查。由在掺杂物之中学习 sp-d 相互作用和直接交换相互作用，我们获得一个方程作为 Cu 掺杂物集中和洞搬运人密度的功能决定自发的磁化。做的无磁性的 Cu 轧了，这被表明能具有房间温度强磁性。系统居里温度 T c 能与 1.0% 的 Cu 集中和 5.0 的洞搬运人密度到达大约 345 K

英文摘要：

Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations. By studying the sp-d interaction and the direct exchange interaction among the dopants, we obtain an equation to determine the spontaneous magnetization as a function of the Cu dopant concentration and the hole carrier density. It is demonstrated that nonmagnetic Cu doped GaN can be of room-temperature ferromagnetism. The system＇s Curie temperature Tc can reach about 345 K with Cu concentration of 1.0% and hole carrier density of 5.0×10^19 cm-3. The results are in good agreement with experimental observations and indicate that ferromagnetism in this systems is tunable by controlling the Cu concentration and the hole carrier density.