中文摘要：

用溶剂熔区移动法制备了掺In的Cd0.9Zn0.1Te晶体,晶体生长温度800℃,温度梯度为20℃/cm,生长速度0.4 mm/h。测试了晶体的Te夹杂情况、红外透过率图谱、I~V特性曲线和PICTS特性,并以1115℃下用VB法生长的掺In的Cd0.9Zn0.1Te晶体做为参照,对比了两者性能。结果表明,溶剂熔区移动法制备的晶体Te夹杂的密度和体积百分比比VB法晶片低,但是Te夹杂的尺寸要比VB法晶体大;溶剂熔区移动法晶体的红外透过率比VB法晶体高;溶剂熔区移动法晶体电阻率比VB法晶体高了一个数量级;PICTS测试发现,溶剂熔区移动法晶体内主要的缺陷密度低于VB法晶体。

英文摘要：

In doped Cd0. 9Zn0. 1Te crystal was prepared by traveling solvent melting zone method with the growth temperature of 800 ℃,the temperature gradient of 20 ℃ / cm and the growth rate of 0. 4 mm / h. The Te inclusions distribution,IR transmittance,I-V characteristics and PICTS of the prepared crystal were analyzed,comparing with that of the Cd Zn Te crystal grown by VB method at the temperature of 1115 ℃.The results show that the Te inclusions size is larger in the Cd Zn Te crystal grown by traveling solvent melting zone method,while the density and volume fraction of Te inclusions are smaller than that in the Cd Zn Te crystal by VB method,which contributes to the higher IR transmittance of Cd Zn Te crystal grown by traveling solvent melting zone method. Moreover,resistivity of Cd Zn Te crystals grown by traveling solvent melting zone method has one order of magnitude accurate higher than that of Cd Zn Te crystals grown by VB method. The PICTS test indicates that the primary defects concentrations in Cd Zn Te crystals grown by traveling solvent melting zone method are less than that in Cd Zn Te crystals grown by VB method.