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中文摘要：
以Ga2O3为原料,用微波水热法和高温氨化两步法合成GaN纳米棒。采用XRD及SEM对其结晶形貌进行表征。研究得出,GaN纳米粉呈长径比约为5：1的棒状,该纳米棒是由沿（002）方向高度取向一致的GaN晶粒结晶而成。XRD分析显示,GaN纳米棒为六方纤锌矿结构且结晶良好。光致发光（PL）分析显示,合成纳米棒在367nm处存在GaN本征发光峰。中心位于468nm、493nm及534nm附近出现了宽而弱的发射带,这有助于GaN在光电领域的应用。
英文摘要：
The GaN nanorods were successfully synthesized by means of a combination of microwave hydrothermal process and ammoniation at high temperature using Ga2O3 as raw material.The synthesized GaN and the precursor GaOOH were characterized by X-ray diffraction（XRD） and scanning electron microscope（SEM）.It is found that GaN nanorods with aspect ratio of 5：1 are composed of highly oriented nanoparticles.The nanorods belong to hexagonal structure,which crystal orientation is（002）.Photoluminescence（PL） shows the intrinsic emissions of GaN are observed at 367nm.Moreover,three broad weak excitation bands peaked at 468nm,493nm and 534 nm are also obtained,which will be promisingly applied to electro-optical field of GaN.
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