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中文摘要：
采用溶胶凝胶工艺，在ITO透明导电玻璃基板上成功地制备了Zn掺杂的Pb0.4Sr0.6TiO3（PST）铁电薄膜。利用XRD测定了薄膜的相结构，精密阻抗分析仪研究了薄膜的介电性能。在不同外加直流电场下测试Zn掺杂PST薄膜的介电性能，研究薄膜的介电可调性大小与外加偏压施加顺序的关系。结果表明，该薄膜呈现单一的钙钛矿相结构。发现了在预先施加一个相对较高的预极化电场，薄膜在零电场下的介电常数得到了提高。预极化能更多地激发出介电薄膜中偶极子数目，增大了薄膜在零偏压处的介电常数，从而提高了薄膜的介电可调性，在不同的测试电压下可分别从提高3％到提高45％不等，测试电压越低，表现出来的这种提高就越大。
英文摘要：
Zn-doped PST thin films （Pb0.4Sr0.6）ZnxTi1-xO3-x（x=0-0.12） were fabricated by sol-gel dip-coating method on ITO/glass substrate. The phase structure and dielectric property of the thin film were measured by X-ray diffractometer and accurate impedance analyzer respectively. Results showed that all the thin films had the perovskite phase structure. After pre-polarization, it was found that the dielectric constant of the Zn-doped PST thin films increased at zero DC bias, so did the dielectric tunability. Due to the increase of polaron through pre-polarization, the dielectric tunability of the thin film can be enhanced by 3% to 45% depending on bias. The lower the DC bias is, the better the tunability is.
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