中文摘要：

使用45°双弯曲磁过滤阴极真空电弧系统（FCVA）制备超薄四面体非晶碳膜（ta-C）,研究了弧流对薄膜结构和性能的影响。结果表明：当弧流由40 A增加到70 A时薄膜沉积速率提高,sp3的含量先增加后减小;当弧流为60 A时薄膜sp3的含量达到最大66%,密度也达到最大（3067 kg/m3）。残余压应力随着弧流的增加呈现先增加后减小的趋势,当弧流为40 A时薄膜的残余应力最小（4 GPa）。在碳膜沉积过程中碳源粒子有填充基体凹坑和减少基体缺陷的作用,使其表面非常光滑。超薄ta-C碳膜的表面粗糙度随着弧流的增加先降低后增加,当弧流为50 A时薄膜表面粗糙度最小（0.195 nm）。

英文摘要：

Ultrathin tetrahedral amorphous carbon （ta-C） films were deposited by a home developed filtered cathodic vacuum arc technology. The effect of arc current on the structure and property of the pre-pared films was investigated. Results show that as the arc current increased from 40 A to 70 A, the depo- sition rate increased, the sp3 fraction increased first and then decreased; when the arc current was 60 A the maximal density of 3.067 g/cm^3 and sp^3 fraction of 66% was obtained. The variation of residual compressive stress was similar to sp^3 fraction. The minimum residual stress was found about 4 GPa for the arc current 40 A. The surface roughness as a function of arc current decreased gradually first and then in- creased, and when the arc current was 50 A the minimum surface roughness was 0.195 nm. The deposit-ed ions could fill in the defects of substrate which leads to reducing the surface roughness of ultrathin ta-C films.