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Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer depos
  • ISSN号：1071-1023
  • 期刊名称：Journal of Vacuum Science and Technology B
  • 时间：2012.3
  • 页码：020602-
  • 相关项目：原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者： Fang, R. C.|Wang, L. H.|Yang, W.|Sun, Q. Q.|Zhou, P.|Wang, P. F.|Ding, S. J.|Zhang, David W.|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
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