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中文摘要：
多孔的硅样品在不同情形(N_2， Ar， O_2 和空气) 下面与快速的热过程(RTP ) 被对待。在处理前后，样品借助于光谱学和 Fourier 转变的光致发光(PL ) 被检查红外线的光谱学(FTIR ) 。排放山峰在多孔的硅样品的 PL 系列被发现的四盏蓝灯在 400 deg C 上面在温度使遭到了到 RTP 处理，山峰位置被发现不与 RTP 处理的情形和温度变化。它在 RTP 处理期间由于氧化被认为那，在多孔的硅的 Si 水晶的杆尺寸减少了，导致轻排放的蓝移动。与 Si 晶体大小相关不连续的假设和以前的研究人员“理论计算， PL 山峰位置没与 theRTP 温度和情形变化。
英文摘要：
Porous silicon samples were treated with the rapid thermal process （RTP） under different circumstances （N2, Ar, 02 and Air）. Before and after treatments, the samples were checked by means of photoluminescence （PL） spectroscopy and Fourier transform infrared spectroscopy （FTIR）. Four blue light emission peaks were found in the PL spectra of porous silicon samples subjected to the RTP treatments at temperatures above 400℃. The peak positions were found not to vary with the circumstances and temperatures of RTP treatments. It is considered that due to oxidation during the RTP treatments, the pole size of Si crystal in porous silicon decreased, resulting in the blue shift of light emission. Correlated with the Si crystal sizes discontinuous hypothesis and previous researchers＇ theory calculation, the PL peak positions did not vary with the RTP temperature and circumstances.
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