中文摘要：

采用等离子体增强化学气相沉积法制备了不同硼掺杂比的 P 型 a-Si：H 系列薄膜。研究了硼掺杂比对 P 型 a-Si：H 薄膜微结构和光/电学性能的影响；同时，对最优掺杂比下的 P 型 a-Si：H 薄膜进行了真空退火处理，以研究薄膜晶体结构的改变对其光/电学性能的影响。结果表明：随着硼掺杂比的增加，P 型 a-Si：H 薄膜的非晶结构没有实质改变，但其光学带隙及电学性能均有明显变化，总结出最佳硼掺杂比为 1.0%。经真空退火处理后，P 型 a-Si：H薄膜的有序程度明显提高，光学带隙从 1.81eV 降低到 1.72eV，电导率提高 3 个数量级。薄膜的晶体结构比硼掺杂量对薄膜电学性能的改善更为显著。

英文摘要：

A series of P-type a-Si：H films with different flow rates of borane were prepared by a plasma enhanced chemical vapor deposition method. The influence of boron-doping amount on the microstructures and properties of a-Si：H films was analyzed. The P-type a-Si：H film with the optimal boron-doped amount was annealed in vacuum so as to investigate the influence of the film crystal structure change on the properties. The results indicate that with the increase of boron-doping amount, the microstructures of P type a-Si：H films have no substantial change, and the band gaps and electrical properties appear varying. The optimum boron-doping amount was proven to be 1.0%. The band gap of a-Si：H film decreased from 1.81 to 1.72 eV and the conductivity increased by 3 orders of magnitude after annealing. The crystal structure of film could improve the electrical properties rather than the boron-doping ratio.