位置：成果数据库 > 期刊 > 期刊详情页
Optimized growth of graphene on SiC: from the dynamic flip mechanism
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2015.2.2
  • 页码：4522-4528
  • 相关项目：宽带隙氧化物半导体材料中晶格无序化对能带的影响
作者： Jun He|Yuan-Ping Feng|A. T. S.Wee|D. Z. Shen|
同期刊论文项目
宽带隙氧化物半导体材料中晶格无序化对能带的影响
期刊论文 13
同项目期刊论文
基于立方相MgZnO薄膜的高响应度深紫外探测器
Properties of Disorder-Engineered Black Titanium Dioxide Nanoparticles through Hydrogenation
Laser-Modified Black Titanium Oxide Nanospheres and Their Photocatalytic Activities under Visible Li
Reversible Switching of a Single-Dipole Molecule Imbedded in Two-Dimensional Hydrogen-Bonded Binary
Tunable Hybridized Quadrupole Plasmons and Their Coupling with Excitons in ZnMgO/Ag System
Dynamical properties and their strain-dependence of ZnSe(ZnSe:N): Zinc-blende and wurtzite
Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles
Effect of hydrogenation on the microwave absorption properties of BaTiO3 nanoparticles
Hydrogenation and Disorder in Engineered Black TiO2
p-Type Conductivity in N-Doped ZnO: The Role of the N-Zn-V-O Complex
梯度组分缓冲层诱导的单一立方相Mg0.3Zn0.7O薄膜外延生长