中文摘要：

用超高真空扫描隧道显微镜（UHV-STM）研究了金属富勒烯分子Gd@C82在Si（111）7×7重构表面的吸附特性和电学特性.STM形貌像显示Gd@C82分子和Si基底之间相互作用较强,Gd@C82分子吸附在Si基底的三种特定的位置上,其中在Si（111）7×7单胞内三个顶戴原子间的吸附位最稳定.扫描隧道谱（STS）的测量显示Gd@C82分子呈现半导体特性.分子表面局域电子态密度（LDOS）在Gd附近受到Gd与碳笼间电子转移的影响,发生显著变化.

英文摘要：

Structures and electronic properties of the endohedral metallofullerence, Gd @ C82, adsorbed on Si（ 111 ） reconstructed surface was studied with ultrahigh vacuum scanning tunneling microscopy （UHV-STM）.STM images show that the adsorbed Gd@C82 molecules display semi-coeducting properties and above the three adatoms in the 7 × 7 unit cell is the preferential, stable adsorption site. Moreover, electron transfer between Gd and C82 cage strongly affects local desity of states （LDOS） of Gd@C82.