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Characterization of random telegraph noise in scaled high-k/metal-gate MOSFETs with SiO2/HfO2 gate d
  • ISSN号：1938-5862
  • 期刊名称：ECS Transactions
  • 时间：2013
  • 页码：941-946
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Li, Meng|Wang, Runsheng|Zou, Jibin|Huang, Ru|
同期刊论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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