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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si （111） substrate with AlGaN interlayer
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN304.23[电子电信—物理电子学] TN304.054[电子电信—物理电子学]
  • 作者机构：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, [2]Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China, [3]Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60506001, 60476021, 60576003, 60776047 and 60836003）, the National Basic Research Program of China （Grant No. 2007CB936700）, and the Project of Technological Research and Development of Hebei Province, China （Grant No. 07215134）.Acknowledgement The authors would like to thank Beijing Synchrotron Radiation Facility （BSRF） for the assistance in thin film characterization.
作者： 吴玉薪[1], 朱建军[1], 陈贵锋[2], 张书明[1], 江德生[1], 刘宗顺[1], 赵德刚[1], 王辉[1], 王玉田[1], 杨辉[1,3]
关键词： SI(111)衬底, 外延生长, 氮化镓, 缓冲层, 外延层, 氮化铝, 结构特性, 厚度, GaN, Si （111） substrate, metalorganic chemical vapour deposition, AIN bufferlayer, AlGaN interlayer
中文摘要：

Corresponding author. E-mail： jjzhu@red.semi.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 被引量:406