中文摘要：

gamma-LiAlO2 单身者水晶是有希望的底层为轧了 heteroepitaxy.In 这篇论文，我们在场由修改 Czochralski 的大尺寸的 LiAlO2 水晶的生长方法。水晶质量被高分辨率的 X 光检查衍射并且化学蚀刻描绘。结果证明成长得当的水晶在 17.7-22.6 弧秒的半最大值(FWHM ) 与完整的宽度有完美的质量并且蚀刻坑密度(0.3-2.2 ) x10~4 cm~( 在整个水晶 boule 的水晶 boule.The 底部的 -2) 显示出最好的质量。光传播系列从对水晶从 0.2 ～ 5.5 亩 m 是透明的并且完全变得在 6.7 亩 m 波长附近吸收的红外展览紫外。在近紫外的区域的光吸收边是大约 191 nm。

英文摘要：

γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum （FWHM） of 17.7-22.6 arcsec and etch pits density of （0.3- 2.2）×10^4 cm^-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5μm and becomes completely absorbing around 6.7μm wavelength, The optical absorption edge in near UV region is about 191 nm.