中文摘要：

本文通过实验发现,硅片表面的洁净度和合适的刻蚀液浓度是成功应用银辅助化学刻蚀法制作硅纳米线的关键。总结出针对该法的一种性能可靠的简单清洗工艺。通过配制不同浓度的刻蚀液发现AgNO3的浓度在0.008-0.016mol·L-1范围内,HF浓度从4.0-5.5mol·L-1范围内可以成功制作出硅纳米线。

英文摘要：

The experiment result of this paper showed that having ultra-pure surface of silicon wafer and proper concentration of corrosive liquid were the key process of making silicon nanowires.We offered a simple high performance cleaning process.The concentration of silver nitrate was between 0.008-0.016mol·L-1 while the concentration of hydrofluoric acid was between 4.0-5.5mol·L-1 was suitable for making silicon nanowires.