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Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors
  • ISSN号：1071-1023
  • 期刊名称：Journal of Vacuum Science and Technology. Part B.
  • 时间：0
  • 页码：051201-051201
  • 相关项目：III族氮化物功率半导体器件与材料研究
作者： Shao, Z. G.|Chen, D. J.|Liu, B.|Lu, H.|Xie, Z. L.|Zhang, R.|Zheng, Y. D.|
同期刊论文项目
III族氮化物功率半导体器件与材料研究
期刊论文 46
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