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4H-SiC材料中刃型位错的仿真模拟研究
  • 期刊名称：航空计算技术
  • 时间：0
  • 页码：57-59+65
  • 语言：中文
  • 相关项目：碳化硅金属-半导体双极型晶体管的研究
作者： 汤晓燕|苗瑞霞|黄鹤|张玉明|张义门|
同期刊论文项目
碳化硅金属-半导体双极型晶体管的研究
期刊论文 29 会议论文 2 专利 14
同项目期刊论文
双外延基区4H-SiC BJTs的建模与仿真(英文)
Investigation of dislocations in 8 off-axis 4H-SiC epilayer
Study of a 4H-SiC epitaxial n-channel MOSFET
First-principle calculation on the defect energy level of carbon vacancy in 4H SiC
Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination
SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier dio
Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC
Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy
SiC晶体缺陷的阴极荧光无损表征研究
High temperature characterization of double base epilayer 4H-SiC BJTs
一种利用层错无损测量4H-SiC外延层厚度的方法
非故意掺杂4H-SiC外延材料本征缺陷的热稳定性
XRD法计算4H-SiC外延单晶中的位错密度
退火对非故意掺杂4H-SiC外延材料386nm和388nm发射峰的影响
4H-SiC中基面位错发光特性研究
Analytical models for the base transit time of a bipolar transistor with double base epilayers
Effect of Carbonized Conditions on Residual Strain and CrystallinityQuality of Heteroepitaxial Growt
Si衬底上3C-SiC异质外延应力的消除
4H—SiC n—MOSFET新型反型层迁移率模型
基于集合经验模态分解的人体结肠动力分析
Analytical models for the base transit time of a bipolar transistor with double base epilayers
一种碳化硅外延层质量评估新技术
XRD法计算4H—SiC外延单晶中的位错密度
SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes
双外延基区4H-SiC BJTs的建模与仿真
Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition
Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer