位置：成果数据库 > 期刊 > 期刊详情页
Raman spectroscopy of shear and layer breathing modes in multilayer MoS2
  • ISSN号：1098-0121
  • 期刊名称：Physical Review B
  • 时间：2013.3.3
  • 页码：-
  • 相关项目：反常带隙半导体量子受限结构中自旋特性的调控
作者： Zhang, X.|Han, W. P.|Wu, J. B.|Milana, S.|Lu, Y.|Li, Q. Q.|Ferrari, A. C.|Tan, P. H.|
同期刊论文项目
反常带隙半导体量子受限结构中自旋特性的调控
期刊论文 80
同项目期刊论文
HgCdTe薄膜的反局域效应
Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on
Multiwall Nanotubes, Multilayers, and Hybrid Nanostructures: New Frontiers for Technology and Raman
Energy spectrum of Dirac electrons on the surface of a topological insulator modulated by a spiral m
Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene
Electrically Controllable Surface Magnetism on the Surface of Topological Insulators
Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavio
Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotranspor
Magneto-transport study of Landau level broadening in a gated AlGaAs/GaAs parabolic quantum well str
Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on
Diffusion and ballistic contributions of electron-electron interaction to the conductivity in an Al0
Weak field magnetoresistance of narrow-gap semiconductor InSb
Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wel
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensiona
Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
Hierarchical carbon nanotube membrane with high packing density and tunable porous structure for hig
Robust optical emission polarization in MoS2 monolayers through selective valley excitation
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by
International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2010)
Application of Raman spectroscopy in carbon nanotube-based polymer composites
Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s
Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect
缺陷单层和双层石墨烯的拉曼光谱及其激发光能量色散关系
三层石墨烯及其n型和p型插层化合物的制备和拉曼光谱表征
旋转双层石墨烯的电子结构
石墨烯等二维原子晶体薄片样品的光学衬度计算及其层数表征
利用径向呼吸模及其倍频模的共振特性精确测定单壁碳纳米管的电子跃迁能量
Microwave-enhanced dephasing time in a HgCdTe film
Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well
Anomalous electron trajectory in topological insulators
Valley filtering in graphene with a Dirac gap
Valley-Dependent Brewster Angles and Goos-Hänchen Effect in Strained Graphene
Electrical switching of the edge channel transport in HgTe quantum wells with an inverted band struc
The shear mode of multilayer graphene
Spin and momentum filtering of electrons on the surface of a topological insulator
Hole mediated magnetism in Mn-doped GaN nanowires
Quantum tunneling through planar p-n junctions in HgTe quantum wells
Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizin
Quantum tunneling through graphene nanorings
Electron tunneling through double magnetic barriers on the surface of a topological insulator
Magnetic barrier on strained graphene: A possible valley filter
Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structur
Electrically controllable RKKY interaction in semiconductor quantum wires
Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells
Electron delocalization in gate-tunable gapless silicene
All-electrical measurement of relative strength of spin-orbit interactions in interacting quantum wi
Spin-orbit interaction induced anisotropic property in interacting quantum wires
Modulation of Fermi velocities of Dirac electrons in single layer graphene by moire superlattice
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of
Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid
The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analy
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Growth of large domain epitaxial graphene on the C-face of SiC
Generation of Pure Bulk Valley Current in Graphene
Gate-controlled electron-electron interactions in an In0:53Ga0:47As/InP quantum well structure (vol
Valley beam splitter based on strained graphene
Raman study of ultrathin Fe3O4 films on GaAs(001) substrate: stoichiometry, epitaxial orientation an
Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
Electronic structure of twisted bilayer graphene
Helical Quantum States in HgTe Quantum Dots with Inverted Band Structures
Photoluminescence of CdSe nanowires grown with and without metal catalyst
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
Magnetotransport properties of (In,Zn)As/InAs p-n junctions
Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP qua
Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions
Density Gradient Ultracentrifugation of Nanotubes: Interplay of Bundling and Surfactants Encapsulati
双层石墨烯位于1800—2150cm-1频率范围内的和频拉曼模
高迁移率InGaAs／InP量子阱中的有效g因子
In0.53Ga0.47As/In0.52Al0.48As量子阱二维电子气中的零场自旋分裂与塞曼分裂