对瞬态模式二极管阵列结构的声表面渡(SAW)存储相关卷积器进行了理论分析,建立了二极管阵列在瞬态模式下的充放电过程理论模型,分析和讨论了影响器件性能的主要因素,所得结论对这种器件结构的设计和优化具有参考价值。
The theoretical analysis of surface acoustic wave memory correlator in the flash mode is presented, by establishing the circuit model for charging process of diode array. The important factors that influence the device performance are also analyzed. The results can be used for the design and optimization of the device.