采用溶胶-凝胶法合成了 Zn1-xNixO 纳米颗粒 , 以放电等离子烧结成块体。扫描电镜照片发现 ,Zn1-xNixO 颗粒呈 300~500 nm 厚的片状结构, 表面存在大量蜂窝状小孔。由 XRD 数据可以看出, x≥0.05 的样品中存在 ZnyNizO 杂质相。热电性能分析表明, 随着 Ni 添加量的增加, 塞贝克系数的绝对值|S|逐渐减小,而电导率得到大幅度提高。与 ZnO 块体材料相比, 溶胶-凝胶法合成的 Zn1-xNixO 材料的热导率大幅度降低,在 750 K 时, Zn1-xNixO 的热导率降低至 3 W/(m·K), 是 ZnO (11 W/(m·K))材料的 1/3。电导率的增加和热导率的降低导致热电优值大幅度提高。在 750 K 下, Zn0.925Ni0.025O 材料的热电优值达到 0.045。
Zn1-xNixO nanoparticles were prepared by Sol-Gel processing. Scanning electron microscope observations in- dicated that nanoparticles were mainly flake structure with many honeycombed passages on the surface of nanoparticles. For the sintered samples, the solubility limit of Ni in the Zn1-xNixO wurtzite structure was found to be 0.05. All doped samples showed n-type semiconducting conductivity. The increase ofx led to a significant decrease in absolute value of Seebeck coefficient (|S|). Over the entire temperature range, the thermal conductivity of Zn1-xNixO samples was much lower than that of bulk ZnO sample. The highest ZT (0.045) was obtained for Zn0.925Ni0.075O at 750 K.