中文摘要：

忆阻器是物理上新实现的具有记忆特性的基本二端电路元件．根据妒．q关系式的泰勒级数形式构建了荷控忆阻器等效电路分析模型，以三次非线性荷控忆阻器模型为例，对不同参数条件下的荷控忆阻器进行了伏安关系、有无源性等电路特性的理论分析．结果表明：荷控忆阻器的伏安关系具有斜体“8”字形紧磁滞回线特性，随其参数符号的不同，荷控忆阻器呈现出无源性和有源性，导致其电路特性发生相应的变化；相比无源荷控忆阻器，有源荷控忆阻器更适用于作为二次谐波信号产生电路使用．制作了荷控忆阻器特性分析等效电路的实验电路，实验测量结果很好地验证了理论分析结果．

英文摘要：

Memristor realized physically is recently a basic two-terminal circuit element with memory property. Based on Taylor series form of ~ - q relationship, a charge-controlled memristor equivalent circuit analysis model is built. A charge-controlled memristor model with cubic nonlinearity is taken, as an example, to make a theoretical analysis of circuit characteristics, such as voltage-current relationship, active-passive property, and so on, of the charge-controlled memristor with different parameters. Results indicate that the voltage-current relationship of the charge-controlled memristor has an italic ＂8＂ shaped hysteresis loop characteristic, and the charge- controlled memristor shows passivity and activity accompanied with the variations of parameter symbols, resulting in the occurrence of the corresponding variations of circuit characteristics; compared with the passive memristor, the active memristor is more suitable for use as a second harmonic signal generation circuit. An experiment circuit is built based on the equivalent circuit of the charge- controlled memristor characteristic analysis, and the experimental results well verify the theoretical analysis.