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氮化铁薄膜中反常霍尔效应的研究
  • ISSN号：1005-023X
  • 期刊名称：材料导报
  • 时间：2015.4.25
  • 页码：16-18+24
  • 分类：O484.3[理学—固体物理;理学—物理]
  • 作者机构：[1]南京邮电大学电子科学与工程学院,南京210003, [2]南京邮电大学理学院,南京210003, [3]南京邮电大学材料科学与工程学院,南京210003
  • 相关基金：国家自然科学基金（51172110;51372119）
  • 相关项目：3d过渡金属掺杂氮化铜薄膜的制备、性能及应用研究
作者： 曹志慧|任山令|李永涛|李兴鳌|
关键词： 磁控溅射方法, 反常霍尔效应, 标度律, 斜散射, magnetron sputtering method, anomalous Hall effect, scaling law, skew scattering
中文摘要：

通过磁控溅射方法制备了氮含量不同的氮化铁薄膜,观察到随着氮含量的增加,薄膜的导电机制从金属到半导体的转变。霍尔电阻的测量表明在高电阻区域反常霍尔电阻率与纵向电阻率的标度律为线性,即反常霍尔效应遵循斜散射机制,但相应的反常霍尔电导率与纵向电导率的关系不总是线性。

英文摘要：

Iron nitride thin films with different nitrogen content were fabricated using magnetron sputtering.With the increasing of nitrogen content, a transition of transport mechanism o{ the film from metallic to hopping conduction was observed. Hall resistance measurements showed that the scaling law between anomalous Hall resistivity and longitudinal resistivity was linear in the dirty regime, but the corresponding relationship between anomalous Hall conductivity and longitudinal conductivity was not always linear.

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期刊信息
  • 《材料导报：纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主编：
  • 地址：重庆市渝北区洪湖西路18号
  • 邮编：401121
  • 邮箱：matreved@163.com
  • 电话：023-67398525
  • 国际标准刊号：ISSN：1005-023X
  • 国内统一刊号：ISSN：50-1078/TB
  • 邮发代号:
  • 获奖情况:
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  • 被引量:3397