中文摘要：

在内孔HFCVD金刚石薄膜沉积过程中,沉积温度(t)、碳源浓度(φ)、总反应压力(ρ)和气体总流量(F)等沉积参数对金刚石薄膜的生长具有显著影响。采用Taguchi方法系统研究这4个关键参数对内孔HFCVD金刚石薄膜性能的综合影响,并且通过自定义的品质因数(figure-of-merit,FOM)评价金刚石薄膜的综合性能。沉积温度、碳源浓度和总反应压力对于内孔HFCVD金刚石薄膜的各项性能及FOM均存在显著影响,并且与平片或外表面沉积存在一定的差异。根据上述影响性分析的结果,以获得最佳的内孔HFCVD金刚石薄膜综合性能为优化目标所确定的最优化沉积参数为:t=830℃,φ=4.5%,ρ=4000 Pa,F=800 mL/min。

英文摘要：

Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min.