中文摘要：

热激活延迟荧光（thermally activated delayed fluorescence,TADF）材料双[4-（9,9-二甲基-9,10-二氢吖啶）苯基]硫砜（DMAC-DPS）在非掺杂型器件中展示了良好的发光特性.本文首先以DMAC-DPS作为器件的发光层,分别对其厚度以及器件的空穴传输层和电子传输层进行了优化,制备了结构简单的非掺杂型高效蓝光器件,其最大外量子效率是14.3%,最大功率效率是26.8 lm W^-1.荧光器件在稳定性等方面具备显著的优越性且荧光材料已被广泛采用,因此我们进一步以DMAC-DPS为主体材料,蓝色荧光材料2,5,8,11-四-叔-丁基苝（TBPe）为客体材料制备了高效的TADF材料敏化蓝光器件.器件的最大外量子效率为12.7%,最大功率效率为22.9 lm W^-1.我们的结果表明分别以TADF材料作为发光材料和主体材料可以制备高效蓝色荧光器件,这为结构简单高效蓝光器件的制备提供了一种新的途径.

英文摘要：

Thermally activated delayed fluorescence（TADF） materials can harvest both singlet and triplet excitons for light emission without the utilization of heavy metal elements such as iridium and platinum and become the third generation organic optoelectronic materials after fluorescent and phosphorescent materials. TADF material bis[4-（9,9-dimethyl-9, 10-dihydroacridine）phenyl]sulfone（DMAC-DPS） shows high photoluminescence quantum yield in solid films, rendering it as a suitable emitter for non-doped organic light emitting diodes. We optimize the hole transport layer, electron transport layer and emission layer thickness for the none-doped DMAC-DPS devices to pursuit high luminance efficiency. We compare the properties of the devices using indium tin oxide（ITO）/Mo O3 hole injection contact with either a 40 nm mC P or 30 nm NPB/10 nm mC P hole transport layer and the results indicate（1） the former devices show larger current than the latter devices for there is a large energy barrier of ca. 0.7 eV for hole injection from NPB into mC P in the latter devices;（2） Both of the devices show similar luminance efficiency and the underlying reason is that the small modulation of the dominant hole current slightly affects the device efficiency. In order to investigate the influence of different electron transport layers on the device performance, we have prepared the devices with either 10 nm DPEPO/40 nm TmP yP B, 50 nm TmP yP B or 50 nm SPPO13 electron transport layer and find out（1） the devices with DPEPO electron transport layer show the highest EQE of 16.2% due to the fact that DPEPO with triplet energy of 3.3 eV can confine excitons inside the emisson layer effectively;（2） The devices with SPPO13 possess the highest current density at certain voltage among the devices and the maximum external quantum efficiency and power efficiency for the--SPPO13 based devices are 14.3% and 26.8 lm W1, which are higher than 13.8% and 22.2 lm W1 for the Tm Py PB based devices. The possible reason is that high