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中文摘要：
在高温高压条件下（HTHP,5.2～5.6GPa,1350～1450℃）,以镍基合金为烧结助剂（触媒）,采用熔渗法制备了质地均匀的D-D结合生长型金刚石复合片（polycrystalline diamond compact,PDC）。采用OM、SEM、XRD和EDS等考察了PDC界面的组织形貌、成分及结合层的元素分布特点,并对其界面生长的复合机理进行了探讨。实验结果表明,镍基合金助剂均匀熔渗透了金刚石层和碳化钨基底层;金刚石层形成了致密相互交错的D-D成键的网状结构;复合界面以过渡层形式存在。
英文摘要：
Homogeneous D-D grown polycrystalline diamond compact（PDC）was synthesized using infiltrating method with nickel based alloy as sintering solvent at high temperature and high pressure（HTHP,5.2-6.0GPa,1350-1450℃）.Optical microscope（OM） and scanning electron microscopy（SEM） were used to observe the microscomic morphology of PDC interface.The composition and the element distribution of PDC interface were investigated,the compound mechanism of interface growth was discussed by XRD and EDS.The results indicate that the original nickel based alloy symmetrically infiltrated the diamond layer and the WC foundation bed;the dense and interlaced microstructure with diamond-diamond（D-D）direct bonding has formed in the diamond layer of PDC;the transition layer exists in PDC.
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