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Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：2011.6.6
  • 页码：-
  • 相关项目：无浸润层的氮化铟镓量子点生长机理和物性研究
作者： Zhao, Wei|Wang, Lai|Lv, Wenbin|Wang, Lei|Wang, Jiaxing|Hao, Zhibiao|Luo, Yi|
同期刊论文项目
无浸润层的氮化铟镓量子点生长机理和物性研究
期刊论文 42 会议论文 2
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