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Low temperature atomic layer deposited HfO2 ？lm for high performance charge trapping ？ash memory ap
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：2014.2.26
  • 页码：045019-045024
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
作者： Dong Zhang|Shengjie Zhao|Yulong Han|Ming Liu|
同期刊论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
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